SIMetrix导入MOS管SPICE参数进行仿真的快速方法-Toy模板网

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问题的提出

在采用SIMetrix 8.3软件进行E类放大器的仿真过程中，用到了NEXPERIA公司的NMOS管器件PMH550UNE, 但在SIMetrix 8.3的库中没有该器件，因此需要导入第三方库文件.

通常的办法是从生产该器件的公司网站上下载器件库文件，导入到SIMetrix中. 库文件为后缀为*.lib 文件，同时导入器件的符号文件，后缀为 .sym。

但在NEXPERIA公司的网站上只能下载到NMOS器件PMH550UNE的SPICE的网表文件，如下所示：

********************************************************************************************************
*
* Nexperia PMH550UNE
* Polarity N - Channel
* Ratings 30V/550.0mOhm/1A
* Revision N#: 1.0
* Created on 2019-01-28 11:02:22
* Please visit www.nexperia.com for latest revision release
*
********************************************************************************************************
*
* Model generated by Nexperia
* Copyright(c) 2018
* All rights reserved
*
* Contains proprietary information which is the property of Nexperia.
*
********************************************************************************************************

.SUBCKT PMH550UNE D G S

* Package impedance
LD D 5 5.000p
RLD2 D 5 12.57m
RLD1 5 4 10.00u
LG G 1 218.2p
RLG G 1 548.3m
LS S 8 315.1p
RLS2 S 8 792.0m
RLS1 8 7 26.64m

* Drain,gate and source resistances
RD 3 4 416.4m TC= 2.582m,1.000n
RG 1 2 19.00
RS 6 7 1.000u

* Body Diode
RBD 9 4 327.5m TC= 4.000m,23.00u
DBD 7 9 D_DBD
RDS 7 4 1.948G TC= -5.000m

* Internal MOS
M1 3 2 6 6 MINT

* Gate leakage and gate capacitance
RGS 2 6 11.05MEG
CGS 2 6 26.60p

* CGD
C11 11 12 1E-12
V11 11 0 0Vdc
G11 3 2 VALUE {V(13,0)*I(V11)}
E11 12 0 3 2 1
E12 13 0 TABLE {V(12)}
+ (-4.5,75.0) (-1.56,75.0) (0.01,28.8995) (0.1,24.986) (0.2,21.397) (0.5,13.477) (1.0,9.4903) (2.0,7.4342999999999995) (3.0,6.5095) (4.0,5.9329) (5.0,5.5226) (6.0,5.2074) (8.0,4.741700000000001) (10.0,4.4043) (12.0,4.142799999999999) (15.0,3.84) (24.0,3.2755)

.MODEL MINT NMOS Vto= 870.5m Kp= 3.892 Nfs= 343.4G Eta= 0.000
+ Level= 3 Gamma= 0.000 Phi= 600.0m Is= 1.000E-24 UO= 600.0
+ Js= 0.000 Pb= 800.0m Cj= 0.000 Cjsw= 0.000 Cgso= 0.000 Cgdo= 0.000 Cgbo= 0.000
+ Tox= 100.0n Xj= 0.000
+ Vmax= 618.1

.MODEL D_DBD D Bv= 38.68 Ibv= 250.0u Rs= 1.000u Is= 3.412p
+ N= 1.070 M= 704.3m VJ= 200.0m Fc= 500.0m Cjo= 80.77p Tt= 18.50n

.ENDS PMH550UNE

********************************************************************************************************
* - Limited warranty and liability -
*
* Information in this document is believed to be accurate and reliable. However,Nexperia does not give
* any representations or warranties,expressed or implied,as to the accuracy or completeness of such
* information and shall have no liability for the consequences of use of such information.
* Nexperia takes no responsibility for the content in this document if provided by an information source
* outside of Nexperia. In no event shall Nexperia be liable for any indirect,incidental,punitive,
* special or consequential damages (including - without limitation - lost profits,lost savings,
* business interruption,costs related to the removal or replacement of any products or rework charges)
* whether or not such damages are based on tort (including negligence),warranty,breach of contract or
* any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever,
* Nexperia's aggregate and cumulative liability towards customer for the products described herein shall
* be limited in accordance with the Terms and conditions of commercial sale of Nexperia.
*
********************************************************************************************************

现需要将该网表文件导入到SIMetrix中。

解决方法

下图为E类放大器的SIMetrix的仿真原理图，任意从库中选择一NMOS管，如信号BSC12DN20NS3_L0, 如下如Q1器件.
simetrix,笔记,stm32,硬件工程,射频工程,硬件架构,pcb工艺
右键Q1器件，选择View/Edit model, 如下图所示

上栏为Global library model, 用户不能够编辑，下栏为Local model, 用户可编辑.

将需要仿真的器件PMH550UNE的SPICE网表文件内容覆盖到下栏中. 同时做以下修改：

将.SUBCKT PMH550UNE D G S行的内容改为：.SUBCKT BSC12DN20NS3_L0-Q1 drain gate source，注意，Q1为器件在原理图中的标号，要与原理图对应，否则会出现找不到…的错误. 同时注意引脚顺序对应，原文中的MOS管BSC12DN20NS3_L0 的引脚标号顺序为drain gate source, 我们仿真用的MOS管PMH550UNE的引脚标号顺序为D,G,S. 漏极、栅极、源极引脚的顺序不要搞错. 如下图所示

simetrix,笔记,stm32,硬件工程,射频工程,硬件架构,pcb工艺